Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation (DCArc-OES)
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SS-EN 15979:2025
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation (DCArc-OES)
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This document describes a method for the analysis of mass fractions of the impurities Al, B, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and grain-shaped silicon carbide of ceramic raw materials and ceramic materials. This application can also be extended to other metallic elements and other similar non-metallic powdered and grain-shaped materials such as carbides, nitrides, graphite, carbon blacks, cokes, carbon, as well as a number of further oxidic raw and basic materials after appropriate testing.
NOTE There is positive experience with materials such as, for example, graphite, boron carbide (B4C), boron nitride (BN), tungsten carbide (WC) and several refractory metal oxides.
This testing procedure is applicable to mass fractions of the impurities mentioned above from approximately 1 mg/kg up to approximately 3 000 mg/kg, after verification. In some cases, it is possible to extend the range up to 5 000 mg/kg depending on element, emission lines, DCArc parameters, and sample mass.
Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by OES by DC arc excitation (DCArc-OES)
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