1.1 This practice covers a procedure to be followed to free the constant composition region of epitaxially grown gallium arsenide phosphide, GaAs(1x)Px, from the substrate and graded region on which it was grown in o
ASTM
Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements (Withdrawn 2008)
STD-56469
1977
1977-05-27
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