1.1 This test method covers a procedure for measuring the compressive residual strain in thin films. It applies only to films, such as found in microelectromechanical systems (MEMS) materials, which can be imaged using an interferometer. Measurements from fixed-fixed beams that are touching the underlying layer are not accepted.1.2 This test method uses a non-contact optical interferometer with the capability of obtaining topographical 3-D data sets. It is performed in the laboratory.<